FDD2612 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDD2612 Key Features
- 4.9 A, 200 V. RDS(ON) = 720 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching speed
- Low gate charge (8nC typical)