FDD3680 - 100V N-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD3680
Manufacturer	Fairchild Semiconductor
File Size	75.19 KB
Description	100V N-Channel PowerTrench MOSFET
Datasheet	FDD3680 Datasheet
Additional preview pages of the FDD3680 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V.
Low gate charge (38 nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
Continuous.
Pulsed T A=25oC unless otherwise noted Parame.

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Published: Mar 30, 2005 |