FDD4685 Datasheet | Fairchild Semiconductor

FDD4685 40V P-Channel Power Trench® MOSFET March 2015 FDD4685 40V P-Channel Power Trench® MOSFET - 40V, - 32A, 27mΩ Features General Description - Max r DS(on) = 27mΩ at VGS = - 10V, ID = - 8.4A - Max r DS(on) = 35mΩ at VGS = - 4.5V, ID = - 7A - High performance trench technology for extremely low r DS(on) - Ro HS pliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary Power Trench® technology to deliver low r DS(on) and good switching characteristic offering superior performance in application. Application - Inverter - Power Supplies DT O- P-2A5K2 (T O -25 2) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C TC= 25°C TA= 25°C TC= 25°C Thermal Characteristics (Note 1) (Note 1a) (Note...