FDD4685 Description
Max rDS(on) = 27mΩ at VGS = 10V, ID = 8.4A Max rDS(on) = 35mΩ at VGS = 4.5V, ID = 7A High performance trench technology for extremely low rDS(on) RoHS pliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
FDD4685 Key Features
- Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
- Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
- High performance trench technology for extremely low rDS(on)
- RoHS pliant
- Inverter
- Power Supplies
- Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operat
- 55 to +150