FDD4685_F085 Datasheet | Fairchild Semiconductor

FDD4685_F085 P-Channel Power Trench® MOSFET P-Channel Power Trench® MOSFET -40V, -32A, 35mΩ Features - Typ r DS(on) = 23mΩ at VGS = -10V, ID = -8.4A - Typ r DS(on) = 30mΩ at VGS = -4.5V, ID = -7A - Typ Qg(TOT) = 19n C at VGS = -5V - High performance trench technology for extremely low r DS(on) - Ro HS pliant - Qualified to AEC Q101 Applications - Inverter - Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C .fairchildsemi. FDD4685_F085 P-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC<90o C, VGS = 10V) Pulsed EAS Single Pulse Avalanche Energe Power Dissipation Dreate above 25o C TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings -40 ±20 -32 See Figure 4 121 83...