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FDD4685_F085 - P-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A.
  • Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A.
  • Typ Qg(TOT) = 19nC at VGS = -5V.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDD4685_F085 P-Channel PowerTrench® MOSFET FDD4685_F085 P-Channel PowerTrench® MOSFET -40V, -32A, 35mΩ Features „ Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.4A „ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchild Semiconductor Corporation FDD4685_F085 Rev. C 1 www.fairchildsemi.