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FDD5810 - N-Channel Logic Level Trench MOSFET

Key Features

  • RDS(ON) = 22mΩ (Typ. ), VGS = 5V, ID = 29A.
  • Qg(5) = 13nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse / Repetitive Pulse).
  • Qualified to AEC Q101.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5810 N-Channel Logic Level Trench® MOSFET MPLEMENTATION October 2007 FDD5810 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ Features „ RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2006 Fairchild Semiconductor Corporation FDD5810 Rev. A (W) 1 www.fairchildsemi.