FDD5810-F085 - N-Channel Logic Level Trench MOSFET

onsemi

Key Features

RDS(ON) = 22m: Typ. ), VGS = 5V, ID = 29A.
Qg(5) = 13nC (Typ. ), VGS = 5V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse / Repetitive Pulse).
Qualified to AEC Q101.
RoHS Compliant.
Motor / Body Load Control.
ABS Systems.
Powertrain Management.
Injection System.
DC-DC converters and Off-line UPS.
Distributed Power Architecture and VRMs.
Primary Switc.

FDD5810-F085 n-channel logic level trench mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDD5810-F085
Manufacturer	onsemi
File Size	282.84 KB
Description	N-Channel Logic Level Trench MOSFET
Datasheet	FDD5810-F085 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5810-F085 N-Channel Logic Level Trench® MOSFET MPLEMENTATION FDD5810-F085 N-Channel Logic Level Trench®MOSFET 60V, 36A, 27m: Applications Features RDS(ON) = 22m: Typ.), VGS = 5V, ID = 29A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse / Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Motor / Body Load Control ABS Systems Powertrain Management Injection System DC-DC converters and Off-line UPS Distributed Power Architecture and VRMs Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2010 Semiconductor Components Industries, LLC. September-2017,Rev.