FDD5N53 Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode.
Key Features
- RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
- Low gate charge ( Typ. 11nC)
- Low Crss ( Typ. 5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS compliant UniFETTM tm
