FDD5N53 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power suppliesand...
FDD5N53 Key Features
- RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A
- Low gate charge ( Typ. 11nC)
- Low Crss ( Typ. 5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC)
- Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
- 1.25 4.3