FDD5N60NZ Key Features
- RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A
- Low Gate Charge (Typ. 10 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Imoroved Capability
- RoHS pliant
- Part: FDD5N60NZ
- Manufacturer: Fairchild (official site)
- Size: 635.86 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDD5N50 | N-Channel UniFET MOSFET |
| FDD5N50F | N-Channel MOSFET |
| FDD5N50FTM_WS | N-Channel MOSFET |
| FDD5N50NZ | MOSFET |
| FDD5N50NZF | MOSFET |
FDD5N60NZ Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress.