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FDD6296 - 30V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

DC/DC converter

Key Features

  • 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V.
  • Low gate charge.
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Pow.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD6296/FDU6296 March 2015 FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter • Power management Features • 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.