FDD6676AS Overview
Description
The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Key Features
- 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
- Includes SyncFET schottky body diode
- Low gate charge (46nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
