FDD6680 Datasheet | Fairchild Semiconductor

FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features - 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V - Low gate charge - Fast Switching Speed - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - Motor Drives I-PAK (TO-251AA) G D S D-PAK TO-252...