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FDD6685 - 30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

25V).

Key Features

  • 40 A,.
  • 30 V. RDS(ON) = 20 mΩ @ VGS =.
  • 10 V RDS(ON) = 30 mΩ @ VGS =.
  • 4.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Qualified to AEC Q101 D G S G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note.

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FDD6685 March 2015 FDD6685 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.