FDD6685 Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V).
FDD6685 Key Features
- 40 A, -30 V. RDS(ON) = 20 mΩ @ VGS = -10 V RDS(ON) = 30 mΩ @ VGS = -4.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Qualified to AEC Q101