FDD6796 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDD6796 Key Features
- Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 15.5 A
- 100% UIL tested
- RoHS pliant