Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Inverter
H-Bridge
D1
Features
- Q1: N-Channel.
- Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A.
- Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A
Q2: P-Channel.
- Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A.
- Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A.
- Fast switching speed.
- Qualified to AEC Q101.
- RoHS Compliant
General.
FDD8424H_F085A Datasheet
