Fairchild Semiconductor FDD850N10LD
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.| Part No. | FDD850N10LD |
|---|---|
| Datasheet | FDD850N10LD Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel PowerTrench MOSFET + Diode |
| Buy | Stock & Price |
FEATURES
● RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A● RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
● Low Gate Charge (Typ. 22.2 nC)
● Low Crss (Typ. 42 pF)
● Fast Switching
● 100% Avalanche Tested
● Improved dv/dt Capability
● RoHS Compliant
DESCRIPTION
APPLICATIONS
● LED Monitor Backlight● LED TV Backlight
● LED Lighting
● Consumer Appliances, DC-DC converter (Step up & Step down) 3 12 45 3 TO252-5L 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 1
MAXIMUM RATINGS
TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD IF(AV) IFSM TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25oC) - Derate Above 25oC Diode Average Rectified Forward Current (TC = 138oC) Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave Operating and St...
