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FDD8750 - N-Channel MOSFET

General Description

Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A Low gate charge: Qg(10) = 6nC(Typ) Low gate resistance Avalanche rated and 100% tested RoHS Compliant This N-Channel MOSFET has been designed specifica

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8750 N-Channel PowerTrench® MOSFET December 2006 FDD8750 N-Channel PowerTrench® MOSFET tm 25V, 2.7A, 40mΩ Features General Description „ Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A „ Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A „ Low gate charge: Qg(10) = 6nC(Typ) „ Low gate resistance „ Avalanche rated and 100% tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed.