FDD8750 Description
Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A Low gate charge: Qg(10) = 6nC(Typ) Low gate resistance Avalanche rated and 100% tested RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low...
FDD8750 Key Features
- Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A
- Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A
- Low gate charge: Qg(10) = 6nC(Typ)
- Low gate resistance
- Avalanche rated and 100% tested
- RoHS pliant
- Low current DC-DC switching
- Linear regulation
- 55 to +175