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FDD8750 N-Channel PowerTrench® MOSFET
December 2006
FDD8750
N-Channel PowerTrench® MOSFET
tm
25V, 2.7A, 40mΩ
Features
General Description
Max rDS(on) = 40mΩ at VGS = 10V, ID = 2.7A Max rDS(on) = 60mΩ at VGS = 4.5V, ID = 2.7A Low gate charge: Qg(10) = 6nC(Typ) Low gate resistance Avalanche rated and 100% tested RoHS Compliant
This N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed.