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FDD8880 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low r DS(ON) and fast switching speed.

Key Features

  • r DS(ON) = 9m Ω , V GS = 10V, ID = 35A.
  • r DS(ON) = 12m Ω , V GS = 4.5V, I D = 35A.
  • High performance trench technology for extremely low r DS(ON).
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8880 September 2004 FDD8880 N-Channel PowerTrench® MOSFET 30V, 58A, 9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features • r DS(ON) = 9m Ω , V GS = 10V, ID = 35A • r DS(ON) = 12m Ω , V GS = 4.