FDD8880 Datasheet | Fairchild Semiconductor

September 2004 N-Channel PowerTrench® MOSFET 30V, 58A, 9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features - r DS(ON) = 9m Ω , V GS = 10V, ID = 35A - r DS(ON) = 12m Ω , V GS = 4.5V, I D = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge Applications - DC/DC converters - High power and current handling capability D-PAK TO-252 (TO-252) MOSFET Maximum Ratings T C = 25°C unless...