FDD8880 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
FDD8880 Key Features
- rDS(ON) = 9 mW, VGS = 10 V, ID = 35 A
- rDS(ON) = 12 mW, VGS = 4.5 V, ID = 35 A
- High Performance Trench Technology for Extremely Low rDS(ON)
- Low Gate Charge
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS pliant