FDG1024NZ Description
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
FDG1024NZ Key Features
- Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
- Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
- Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
- Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
- HBM ESD protection level >2 kV (Note 3)
- Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V)
- Very small package outline SC70-6
- RoHS pliant