FDG1024NZ - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDG1024NZ
Manufacturer	ON Semiconductor
File Size	273.13 KB
Description	Dual N-Channel MOSFET
Datasheet	FDG1024NZ Datasheet
Additional preview pages of the FDG1024NZ datasheet.

This dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A.
Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A.
Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A.
Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A.
HBM ESD Protection Level > 2 kV (Note 3).
Very Low Level Gate Drive Requirements Allowing Operation in 1.5 V Circuits (VGS(th) < 1 V).
Very Small Package Outline SC.
88/SC.
70 6 Lead.
RoHS Compliant.
These De.

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Published: Dec 24, 2023 |