FDG1024NZ Description
This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
FDG1024NZ Key Features
- Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
- Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
- Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
- Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A
- HBM ESD Protection Level > 2 kV (Note 3)
- Very Low Level Gate Drive Requirements Allowing Operation
- Very Small Package Outline SC-88/SC-70 6 Lead
- RoHS pliant
- These Device is Halogen Free
- 55 to +150 °C