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FDG1024NZ - Dual N-Channel MOSFET

General Description

This dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Key Features

  • Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A.
  • Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A.
  • Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A.
  • Max rDS(on) = 389 mW at VGS = 1.5 V, ID = 0.8 A.
  • HBM ESD Protection Level > 2 kV (Note 3).
  • Very Low Level Gate Drive Requirements Allowing Operation in 1.5 V Circuits (VGS(th) < 1 V).
  • Very Small Package Outline SC.
  • 88/SC.
  • 70 6 Lead.
  • RoHS Compliant.
  • These De.

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Datasheet Details

Part number FDG1024NZ
Manufacturer onsemi
File Size 273.13 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDG1024NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. Features • Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A • Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A • Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.