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FDG6316P - P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 0.7 A,.
  • 12 V. RDS(ON) = 270 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 360 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 650 mΩ @ VGS =.
  • 1.8 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG6316P December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package D G S S 1 or 4 G 2 or 5 D 3 or 6 6 or 3 D 5 or 2 G 4 or 1 S Pin 1 S G D SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.