Datasheet Summary
December 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 0.7 A,
- 12 V. RDS(ON) = 270 mΩ @ VGS =
- 4.5 V RDS(ON) = 360 mΩ @ VGS =
- 2.5 V RDS(ON) = 650 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package
S 1 or 4 G 2 or 5 D 3 or 6
6 or 3 D 5 or 2 G 4 or 1 S
Pin 1
SC70-6
The pinouts are symmetrical; pin 1 and...
