Datasheet Summary
DATA SHEET .onsemi.
MOSFET- Specified, P-Channel, POWERTRENCH)
1.8 V
General Description This P- Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 0.7 A,
- 12 V
- RDS(ON) = 270 mW @ VGS =
- 4.5 V
- RDS(ON) = 360 mW @ VGS =
- 2.5 V
- RDS(ON) = 650 mW @ VGS =
- 1.8 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70- 6 Surface Mount Package
- These Devices are Pb- Free and are RoHS pliant
Applications
- Battery Management
- Load...
