Datasheet Details
| Part number | FDG6316P |
|---|---|
| Manufacturer | onsemi |
| File Size | 290.38 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDG6316P Datasheet
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General Description
This P
low voltage POWERTRENCH process.
It has been optimized for battery power management applications.
Key Features
- 0.7 A,.
- 12 V.
- RDS(ON) = 270 mW @ VGS =.
- 4.5 V.
- RDS(ON) = 360 mW @ VGS =.
- 2.5 V.
- RDS(ON) = 650 mW @ VGS =.
- 1.8 V.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(ON).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.