Download FDG6335N Datasheet PDF
FDG6335N page 2
Page 2
FDG6335N page 3
Page 3

Datasheet Summary

October 2001 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features - 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V - Low gate charge (1.1 nC typical) - High performance trench technology for extremely low RDS(ON) - pact industry standard SC70-6 surface mount package Applications - DC/DC converter - Power management -...