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DATA SHEET www.onsemi.com
MOSFET – N-Channel, POWERTRENCH)
20 V
FDG6335N
General Description This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
• 0.7 A, 20 V
♦ RDS(ON) = 300 mW @ VGS = 4.5 V ♦ RDS(ON) = 400 mW @ VGS = 2.5 V
• Low Gate Charge (1.
FDG6335N Datasheet
