FDG6335N Overview
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
FDG6335N Key Features
- 0.7 A, 20 V
- RDS(ON) = 300 mW @ VGS = 4.5 V
- RDS(ON) = 400 mW @ VGS = 2.5 V
- Low Gate Charge (1.1 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant
