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FDJ1028N - N-Channel 2.5 Vgs Specified PowerTrench MOSFET

General Description

This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Key Features

  • 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SC75 package: Enhanced thermal performance in industry-standard package size.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET August 2006 FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench® MOSFET Features ■ 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ Battery management General Description This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.DataSheet4U.