FDMA291P Datasheet | Fairchild Semiconductor

Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D 1 D 2 G 3 Bottom Drain Contact Features - - 6.6 A, - 20V. r DS(ON) = 42 mΩ @ VGS = - 4.5V r DS(ON) = 58 mΩ @ VGS = - 2.5V r DS(ON) = 98 mΩ @ VGS = - 1.8V - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm 6 D 5 D 4 S Micro FET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings - 20 ±8 (Note 1a) Units V V A W °C - 6.6 - 24 2.4 0.9 - 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 291 Device FDMA291P Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor...