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MOSFET – Single P-Channel, POWERTRENCH), 1.8 V Specified
FDMA291P
General Description This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• –6.6 A, –20 V
♦ RDS(ON) = 42 mW @ VGS = –4.5 V ♦ RDS(ON) = 58 mW @ VGS = –2.5 V ♦ RDS(ON) = 98 mW @ VGS = –1.8 V
• Low Profile – 0.8 mm Maximum – in the New Package MicroFET
2x2 mm
• Free from Halogenated Compounds and Antimony Oxides • This Device is Pb−Free, Halide Free and RoHS Compliant RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
FDMA291P Datasheet
