FDMA291P
FDMA291P is P-Channel MOSFET manufactured by onsemi.
Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on- state resistance. The Micro FETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- - 6.6 A,
- 20 V
- RDS(ON) = 42 m W @ VGS =
- 4.5 V
- RDS(ON) = 58 m W @ VGS =
- 2.5 V
- RDS(ON) = 98 m W @ VGS =
- 1.8 V
- Low Profile
- 0.8 mm Maximum
- in the New Package Micro FET
2x2 mm
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and Ro HS pliant Ro HS pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
- 20
±8
- 6.6 24
Power Dissipation for Single Operation
(Note...
