FDMC7678 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC7678 Key Features
- Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
FDMC7678 Applications
- DC Buck Converters Notebook battery power management Load switch in Notebook