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FDMC7678 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A.
  • Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant November 2013 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC7678 N-Channel Power Trench® MOSFET FDMC7678 N-Channel Power Trench® MOSFET 30 V, 19.5 A, 5.3 mΩ Features „ Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant November 2013 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.