FDMC7678 Overview
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC7678 Key Features
- Max rDS(on) = 5.3 mW at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 6.8 mW at VGS = 4.5 V, ID = 15.0 A
- High Performance Technology for Extremely Low rDS(on)
- This Device is Pb-Free, Halide Free and is RoHS pliant
