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FDMC7680 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A.
  • Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant N-Channel Power Trench® MOSFET General.

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Full PDF Text Transcription for FDMC7680 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMC7680. For precise diagrams, and layout, please refer to the original PDF.

FDMC7680 N-Channel Power Trench® MOSFET July 2009 FDMC7680 30 V, 14.8 A, 7.2 m: Features „ Max rDS(on) = 7.2 m: at VGS = 10 V, ID = 14.8 A „ Max rDS(on) = 9.5 m: at VGS =...

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n) = 7.2 m: at VGS = 10 V, ID = 14.8 A „ Max rDS(on) = 9.5 m: at VGS = 4.5 V, ID = 12.4 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant N-Channel Power Trench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

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