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FDMC7680 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

  • Max RDS(on) = 7.2 mW at VGS = 10 V, ID = 14.8 A.
  • Max RDS(on) = 9.5 mW at VGS = 4.5 V, ID = 12.4 A.
  • High Performance Technology for Extremely Low RDS(on).
  • Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDMC7680
Manufacturer onsemi
File Size 295.48 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC7680 Datasheet

Full PDF Text Transcription for FDMC7680 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMC7680. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – N-Channel, POWERTRENCH) 30 V, 14.8 A, 7.2 mW FDMC7680 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has ...

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SFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 7.2 mW at VGS = 10 V, ID = 14.8 A • Max RDS(on) = 9.5 mW at VGS = 4.5 V, ID = 12.