Full PDF Text Transcription for FDMC7680 (Reference)
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MOSFET – N-Channel, POWERTRENCH) 30 V, 14.8 A, 7.2 mW FDMC7680 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has ...
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SFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 7.2 mW at VGS = 10 V, ID = 14.8 A • Max RDS(on) = 9.5 mW at VGS = 4.5 V, ID = 12.