Datasheet Details
| Part number | FDMC8554 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 207.66 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC8554 Download (PDF) |
|
|
| Part number | FDMC8554 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 207.66 KB |
| Description | N-Channel Power Trench MOSFET |
| Download | FDMC8554 Download (PDF) |
|
|
|
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for switching performance and ultra low rdson.
Application Synchronous rectifier ORing FET POL rectifier Bottom 7 8 D D D D Top 5 6 D D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G S S S 4 3 2 1 S S S G D D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 20 ±20 16.5 72 16.5 36 41 2.0 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC8554 Device FDMC8554 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C 1 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 16V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 20 15.7 1 100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th)
FDMC8554 N-Channel PowerTrench® MOSFET February 2007 FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC8554 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDMC8588 | MOSFET |
| FDMC8588DC | MOSFET |
| FDMC8010 | N-Channel PowerTrench MOSFET |
| FDMC8010DC | N-Channel Dual Cool 33 PowerTrench MOSFET |
| FDMC8010ET30 | MOSFET |
| FDMC8015L | MOSFET |
| FDMC8026S | N-Channel MOSFET |
| FDMC8030 | Dual N-Channel Power MOSFET |
| FDMC8032L | MOSFET |
| FDMC8200 | N-Channel MOSFET |