FDMC8554
FDMC8554 is N-Channel Power Trench MOSFET manufactured by Fairchild Semiconductor.
FDMC8554 N-Channel PowerTrench® MOSFET
February 2007
FDMC8554 N-Channel Power Trench® MOSFET
20V, 16.5A, 5mΩ Features
General Description
- Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A
- Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A
- Low Profile
- 1mm max in a MicroFET 3.3x3.3 mm
- RoHS pliant tm
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson.
Application
- Synchronous rectifier
- ORing FET
- POL rectifier
Bottom 7 8 D D D D
Top
..
5 6 7 8
4 3 2 1
1 S S S
Power 33
MOSFET Maximum Ratings TA = 25°C...
