FDMC8554 Description
Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS pliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson. Application Synchronous rectifier ORing FET POL rectifier Bottom 7 8 D D D D Top...
FDMC8554 Key Features
- Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A
- Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A
- Low Profile
- 1mm max in a MicroFET 3.3x3.3 mm
- RoHS pliant
- Synchronous rectifier
- ORing FET
- POL rectifier