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FDMC8554 - N-Channel MOSFET

Description

This N

advanced Power Trench process.

It has been optimized for power management applications.

Features

  • Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A.
  • Max RDS(on) = 6.4 mW at VGS = 4.5 V, ID = 14 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet preview – FDMC8554

Datasheet Details

Part number FDMC8554
Manufacturer ON Semiconductor
File Size 241.00 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8554 Datasheet
Additional preview pages of the FDMC8554 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 20 V, 16.5 A, 5 mW FDMC8554 General Description This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features • Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A • Max RDS(on) = 6.4 mW at VGS = 4.5 V, ID = 14 A • Low Profile − 1 mm Max in Power 33 • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • DC−DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±20 V ID Drain Current A – Continuous TC = 25°C 16.5 – Continuous (Note 1a) TA = 25°C 16.
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