FDMC8554 Description
This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications.
FDMC8554 Key Features
- Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A
- Max RDS(on) = 6.4 mW at VGS = 4.5 V, ID = 14 A
- Low Profile
- 1 mm Max in Power 33
- This Device is Pb-Free, Halide Free and is RoHS pliant