FDMC86160ET100
FDMC86160ET100 is MOSFET manufactured by Fairchild Semiconductor.
Features
General Description
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max r DS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
- Max r DS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
- High performance technology for extremely low r DS(on)
- Termination is Lead-free and Ro HS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.
Applications
- Bridge Topologies
- Synchronous Rectifier
Pin 1
Pin 1
S S SG
D DD D
Top Bottom
Power 33
SD GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise...
