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FDMC86160ET100 - MOSFET

General Description

Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Comp

Key Features

  • General.

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FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ January 2015 Features General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ulta low RDS （on） is required in small spaces such as High performance VRM, POL and orring functions.