FDMC86160ET100
FDMC86160ET100 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.
Features
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max r DS(on) = 14 m W at VGS = 10 V, ID = 9 A
- Max r DS(on) = 23 m W at VGS = 6 V, ID = 7 A
- High Performance Technology for Extremely Low r DS(on)
- Termination is Lead- free and Ro HS pliant
Applications
- Bridge Topologies
- Synchronous Rectifier
DATA SHEET .onsemi.
VDS 100 V r DS(on) MAX 14 m W @ 10 V 23 m W @ 6 V
ID MAX 43 A
Pin 1
Pin 1
SS SG
DDDD
Top
Bottom
WDFN8 3.3x3.3, 0.65P (Power 33)
CASE 483 AW
MARKING DIAGRAM
ZXYYKK FDMC
86160ET
= Assembly Plant Code
= 3- Digit Date Code Format
= 2- Alphanumeric Lot Run
Traceability Code
FDMC86160ET = Device Code
PIN ASSIGNMENT
S1
8D
S2 S3 G4
7D 6D...
