FDMC86160ET100 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.
FDMC86160ET100 Key Features
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A
- Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A
- High Performance Technology for Extremely Low rDS(on)
- Termination is Lead-free and RoHS pliant
FDMC86160ET100 Applications
- Extended TJ Rating to 175°C