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FDMD82100 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive

Features

  • General.

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Datasheet Details

Part number FDMD82100
Manufacturer Fairchild Semiconductor
File Size 201.11 KB
Description MOSFET
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Full PDF Text Transcription

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FDMD82100 Dual N-Channel PowerTrench® MOSFET June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
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