Datasheet4U Logo Datasheet4U.com

FDMD82100 - MOSFET

General Description

Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMD82100 Dual N-Channel MOSFET ON Semiconductor
FDMD8430 Dual N-Channel Power MOSFET ON Semiconductor
FDMD8540L Dual N-Channel MOSFET ON Semiconductor
FDMD86100 Dual N-Channel MOSFET ON Semiconductor
FDMD8630 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMD82100L MOSFET
FDMD8280 MOSFET
FDMD84100 MOSFET
FDMD85100 MOSFET
FDMD86100 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMD82100 Dual N-Channel PowerTrench® MOSFET June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.