FDMD82100L Description
Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS pliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full...
FDMD82100L Key Features
- Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A
- Ideal for flexible layout in primary side of bridge topology
- Termination is Lead-free and RoHS pliant
- 100% UIL tested
- Kelvin High Side MOSFET drive pin-out capability