Datasheet Summary
FDME510PZT P-Channel PowerTrench® MOSFET
P-Channel PowerTrench® MOSFET
-20 V, -6 A, 37 mΩ
Features
- Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A
- Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
- Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A
- Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A
- Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 2400V (Note3)
- RoHS pliant
October 2013
General Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low...
