Click to expand full text
MOSFET – P-Channel POWERTRENCH)
-20 V, -6 A, 37 mW
FDME510PZT
General Description This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
• Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −5 A • Max rDS(on) = 50 mW at VGS = −2.5 V, ID = −4 A • Max rDS(on) = 65 mW at VGS = −1.8 V, ID = −3 A • Max rDS(on) = 100 mW at VGS = −1.5 V, ID = −2 A • Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.
FDME510PZT Datasheet
