Datasheet4U Logo Datasheet4U.com

FDME910PZT Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

📥 Download Datasheet

General Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

It

Overview

FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24.

Key Features

  • Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A.
  • Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A.
  • Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • HBM ESD protection level > 2 kV typical (Note 3).
  • Free from halogenated compounds and antimony oxides.
  • RoHS Compliant February 2015 General.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDME910PZT P-Channel MOSFET ON Semiconductor
ON Semiconductor Logo FDME910PZT-P P-Channel MOSFET ON Semiconductor
ON Semiconductor Logo FDME910PZT-P-Q P-Channel MOSFET ON Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDME905PT MOSFET
FDME1023PZT Dual P-Channel PowerTrench MOSFET
FDME1024NZT Dual N-Channel Power Trench MOSFET
FDME1034CZT Complementary PowerTrench MOSFET
FDME410NZT N-Channel MOSFET
FDME430NT N-Channel PowerTrench MOSFET
FDME510PZT MOSFET
FDME820NZT MOSFET
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM3300NZ N-Channel MOSFET