FDME910PZT
Description
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD.
Key Features
- Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
- Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
- Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
- Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
- HBM ESD protection level > 2 kV typical (Note
- Free from halogenated pounds and antimony oxides
- RoHS compliant February 2015
