FDMS030N06B Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -.
FDMS030N06B Key Features
- RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
- Advanced Package and High Efficiency
- Fast Switching Speed
- 100% UIL Tested
- RoHS pliant
FDMS030N06B Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit