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FDMS030N06B - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

  • RDS(on) = 2.4 m (Typ) at VGS = 10 V, ID = 50 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 100 A, 3 W FDMS030N06B Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 2.4 m (Typ) at VGS = 10 V, ID = 50 A • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies • Renewable system DATA SHEET www.onsemi.com Top Bottom S Pin 1 S SG D D D D PQFN8 5 y 6, 1.