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FDMS039N08B N-Channel PowerTrench® MOSFET
September
FDMS039N08B
N-Channel PowerTrench® MOSFET
80V, 100A, 3.9mΩ Features
• RDS(on) = 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A • Low FOM RDS(on) *QG • Low reverse recovery charge, Qrr • Soft reverse recovery body diode • Enables highly efficiency in synchronous rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.