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FDMS039N08B - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Synchronous Rectification for Server / Telecom PSU Ba

Key Features

  • RDS(on) = 3.2mΩ (Typ. )@ VGS = 10V, ID = 50A.
  • Low FOM RDS(on).
  • QG.
  • Low reverse recovery charge, Qrr.
  • Soft reverse recovery body diode.
  • Enables highly efficiency in synchronous rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FDMS039N08B N-Channel PowerTrench® MOSFET September FDMS039N08B N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ Features • RDS(on) = 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A • Low FOM RDS(on) *QG • Low reverse recovery charge, Qrr • Soft reverse recovery body diode • Enables highly efficiency in synchronous rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.