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FDMS039N08B - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

  • Max RDS(on) = 3.2 mW (Typ. ) @ VGS = 10 V, ID = 50 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr = 80 nC.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 3.9 mW FDMS039N08B General Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • Max RDS(on) = 3.2 mW (Typ.