Description
This N
Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on
state resistance while maintaining superior switching performance.
Features
- Max RDS(on) = 3.2 mW (Typ. ) @ VGS = 10 V, ID = 50 A.
- Low FOM RDS(on).
- QG.
- Low Reverse Recovery Charge, Qrr = 80 nC.
- Soft Reverse Recovery Body Diode.
- Enables Highly Efficiency in Synchronous Rectification.
- Fast Switching Speed.
- 100% UIL Tested.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.
FDMS039N08B Datasheet
