FDMS2506SDC
Overview
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
