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FDMS3006SDC - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 26 A.
  • High performance technology for extremely low rDS(on).
  • SyncFET Schottky Body Diode.
  • RoHS Compliant General.

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Datasheet preview – FDMS3006SDC

Datasheet Details

Part number FDMS3006SDC
Manufacturer Fairchild Semiconductor
File Size 430.14 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS3006SDC Datasheet
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Full PDF Text Transcription

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FDMS3006SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM July 2015 FDMS3006SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM 30 V, 90 A, 1.9 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 26 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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