FDMS3008SDC
Description
Dual CoolTM Top Side Cooling PQFN package - Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A - Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A - High performance technology for extremely low rDS(on) - SyncFET Schottky Body Diode - RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient.
