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FDMS3610S - MOSFET

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A.
  • Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel.
  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
  • Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant General.

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Full PDF Text Transcription for FDMS3610S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMS3610S. For precise diagrams, and layout, please refer to the original PDF.

FDMS3610S PowerTrench® Power Stage December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at ...

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ual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy place

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