FDMS3610S - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDMS3610S
Manufacturer	Fairchild Semiconductor
File Size	351.40 KB
Description	MOSFET
Datasheet	FDMS3610S Datasheet
Additional preview pages of the FDMS3610S datasheet.

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE

Q1: N-Channel.
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A.
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant General.

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Published: Jan 11, 2017 |