FDMS3615S
Description
Q1: N-Channel - Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A - Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel - Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A - Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS compliant Pin 1 This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
