Datasheet4U Logo Datasheet4U.com

FDMS3615S - MOSFET

Description

Q1: N-Channel Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A Low inductance packaging shortens r

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS3615S

Datasheet Details

Part number FDMS3615S
Manufacturer Fairchild Semiconductor
File Size 502.90 KB
Description MOSFET
Datasheet download datasheet FDMS3615S Datasheet
Additional preview pages of the FDMS3615S datasheet.
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS3615S PowerTrench® Power Stage FDMS3615S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET August 2011 Features General Description Q1: N-Channel „ Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel „ Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant Pin 1 This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
Published: |