FDMS3615S Overview
N-Channel Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS...
FDMS3615S Key Features
- Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A
- Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel
- Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A
- MOSFET integration enables optimum layout for lower circuit
- RoHS pliant