Q1: N-Channel
Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A
Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel
Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A
Low inductance packaging shortens r
Full PDF Text Transcription for FDMS3615S (Reference)
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FDMS3615S PowerTrench® Power Stage FDMS3615S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET August 2011 Features General Description Q1: N-Channel Max rD...
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MOSFET August 2011 Features General Description Q1: N-Channel Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant Pin 1 This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy pla
FDMS3615S Datasheet
