Datasheet Summary
FDMS7572S N-Channel PowerTrench®SyncFET
October 2014
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 2.9 mΩ
Features
- Max rDS(on) = 2.9 mΩ at VGS = 10 V, ID = 23 A
- Max rDS(on) = 4.2 mΩ at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
General Description
The FDMS7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an...